System and method for hi-precision ion implantation
US11699570B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2022 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Feb 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.