Si-containing film forming precursors and methods of using the same

US11699584B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Jean-Marc Girard · Versailles, FR
• Peng Zhang · Montvale, US
• Antonio Sanchez · Tsukuba, JP
• Manish Khandelwal · Danbury, US
• Gennadiy Itov · Flemington, US
• Reno Pesaresi · Houston, US

Key dates

• Filing date: Mar 10, 2021
• Grant date: Jul 11, 2023
• Expiry date: Jul 26, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.