Semiconductor device with metal interconnection
US11699658B2 · kind B2 · utility
0Cited by
6References
14Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 1, 2020 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Jan 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a test transistor over the substrate; and multi-level metal interconnections formed over the substrate spaced apart from the test transistor, wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.