Gallium nitride epitaxial structures for power devices
US11699750B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Oct 1, 2020 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | May 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.