Semiconductor device and method of manufacturing the same
US11699764B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2022 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Jan 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.