Method for forming ruthenium film and apparatus for forming ruthenium film
US11702734B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Nov 4, 2021 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Nov 4, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.