Group III nitride substrate, method of making, and method of use
US11705322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2020 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Feb 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.