Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern
US11705332B2 · kind B2 · utility
5Cited by
15References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 15, 2021 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Jan 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02362
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.