Semiconductor device including non-sacrificial gate spacers and method of fabricating the same
US11705503B2 · kind B2 · utility
2Cited by
13References
18Claims
0Family size
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Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.