Semiconductor device and method for manufacturing the same
US11706930B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.