Patent · US Active

Semiconductor device

US11706995B2 · kind B2 · utility

2Cited by
1References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 2, 2021
Grant dateJul 18, 2023
Priority date
Expiry dateSep 30, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/60

Abstract

A semiconductor device includes an array region defined on a substrate, a ring of dummy pattern surrounding the array region, and a gap between the array region and the ring of dummy pattern. Preferably, the ring of dummy pattern further includes a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region and a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.