Method and apparatus for manufacturing monocrystalline silicon
US11708643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2020 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Aug 28, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a monocrystalline silicon with Czochralski process, including: providing polycrystalline silicon and dopant to quartz crucible in single crystal furnace and vacuumizing, melting the polycrystalline silicon under protective gas to obtain silicon melt; after temperature of the silicon melt is stable, immersing seed crystal into the silicon melt to start seeding, lifting a shield away from surface of the silicon melt to adjust distance between the shield and the silicon melt to first preset distance; after seeding, performing shouldering to pull the crystal to increase diameter of the crystal to preset width; starting constant-diameter body growth, lowering the shield towards the surface of the silicon melt to adjust the distance to second preset distance; after growth, entering a tailing stage during which the diameter of the crystal is reduced until the crystal is separated from the silicon melt; and cooling the crystal to obtain monocrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.