Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom
US11708644B2 · kind B2 · utility
1Cited by
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7Claims
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Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Sep 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.