Patent · US Active

Sputtering method

US11710624B2 · kind B2 · utility

0Cited by

4References

9Claims

0Family size

Assignee

BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. · CN

Inventors

Bingliang GUO · Beijing, CN
Huaichao MA · Beijing, CN
Andong Sun · Beijing, CN
Henan Zhang · Albany, US
Boyu DONG · Beijing, CN
Lu Zhang · Corning, US
Yujing Chen · Nanhu, CN

Key dates

Filing date	Oct 20, 2020
Grant date	Jul 25, 2023
Priority date	—
Expiry date	Feb 4, 2041

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C14/0617
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.