Tensile nitride deposition systems and methods
US11710631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | May 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.