Semiconductor device and method of manufacturing the same
US11710639B2 · kind B2 · utility
0Cited by
4References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Oct 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.