Semiconductor device fabrication method

US11710780B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Haiyang Zhang · Shanghai, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: Feb 1, 2021
• Grant date: Jul 25, 2023
• Expiry date: Sep 12, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor device fabrication method is provided. The method includes providing a substrate; forming a first semiconductor layer on the substrate; forming a stack of semiconductor layer structures on the first semiconductor layer, each of the semiconductor layer structures comprising a second semiconductor layer and a third semiconductor layer on the second semiconductor layer, the second and third semiconductor layers having at least a common compound element, and the third semiconductor layer and the first semiconductor layer having a same semiconductor compound; performing an etching process to form a fin structure; performing a selective etching process on the second semiconductor layer to form a first air gap between the first semiconductor layer and the third semiconductor layer and a second air gap between each of adjacent third semiconductor layers in the stack of one or more semiconductor layer structures; and filling the first and second air gaps with an insulator layer.