Light emitting diode containing oxidized metal contacts
US11710805B2 · kind B2 · utility
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10References
8Claims
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Key dates
| Filing date | Sep 24, 2020 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.