Max Batres
27Patents
8h-index
27Co-inventors
75Inventor score
Filing activity: May 13, 2002 → Jan 25, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8372204B2 | Susceptor for MOCVD reactor | Electricity | 529 | Active |
| US7122844B2 | Susceptor for MOCVD reactor | Electricity | 309 | Expired |
| US7335920B2 | LED with current confinement structure and surface roughening | Electricity | 147 | Expired |
| US8034647B2 | LED with substrate modifications for enhanced light extraction and method of making same | Electricity | 33 | Active |
| US8366830B2 | Susceptor apparatus for inverted type MOCVD reactor | Chemistry; Metallurgy | 22 | Expired |
| US7534633B2 | LED with substrate modifications for enhanced light extraction and method of making same | Electricity | 16 | Expired |
| US8133322B2 | Apparatus for inverted multi-wafer MOCVD fabrication | Chemistry; Metallurgy | 14 | Expired |
| US8686431B2 | Gallium and nitrogen containing trilateral configuration for optical devices | Electricity | 14 | Active |
| US9634191B2 | Wire bond free wafer level LED | Electricity | 8 | Active |
| US8541788B2 | LED with current confinement structure and surface roughening | Electricity | 8 | Active |
| US8912025B2 | Method for manufacture of bright GaN LEDs using a selective removal process | Performing Operations; Transporting | 6 | Active |
| US8410490B2 | LED with current confinement structure and surface roughening | Electricity | 5 | Active |
| US10707374B2 | Etendue enhancement for light emitting diode subpixels | Electricity | 5 | Active |
| US8617909B2 | LED with substrate modifications for enhanced light extraction and method of making same | Electricity | 4 | Active |
| US10804436B2 | Light emitting diode containing oxidized metal contacts | Electricity | 2 | Active |
| US11264539B2 | Light emitting diodes containing deactivated regions and methods of making the same | Electricity | 1 | Active |
| US11069837B2 | Sub pixel light emitting diodes for direct view display and methods of making the same | Electricity | 1 | Active |
| US10249786B2 | Thin film and substrate-removed group III-nitride based devices and method | Electricity | 1 | Active |
| US9076926B2 | Gallium and nitrogen containing trilateral configuration for optical devices | Electricity | 0 | Active |
| US11710805B2 | Light emitting diode containing oxidized metal contacts | Electricity | 0 | Active |
| US11908974B2 | Light emitting diodes containing deactivated regions and methods of making the same | Electricity | 0 | Active |
| US10199360B2 | Wire bond free wafer level LED | Electricity | 0 | Active |
| US8772792B2 | LED with surface roughening | Electricity | 0 | Active |
| US11837683B2 | Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency | Electricity | 0 | Active |
| US11127720B2 | Pixel repair method for a direct view display device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.