Integrated circuit with sequentially-coupled charge storage and associated techniques comprising a photodetection region and charge storage regions to induce an intrinsic electric field
US11714001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Oct 21, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/00698
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to the other techniques described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.