Eric A. G. Webster
48Patents
10h-index
44Co-inventors
71Inventor score
Filing activity: Aug 12, 2013 → Dec 13, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9209320B1 | Method of fabricating a single photon avalanche diode imaging sensor | Emerging Cross-Sectional Technologies | 88 | Active |
| US9331116B2 | Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency | Electricity | 64 | Active |
| US9312401B2 | Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications | Electricity | 61 | Active |
| US9685576B2 | Back side illuminated image sensor with guard ring region reflecting structure | Electricity | 49 | Active |
| US9299732B2 | Stacked chip SPAD image sensor | Electricity | 47 | Active |
| US9881963B1 | Horizontal avalanche photodiode | Electricity | 40 | Active |
| US10916075B1 | Dynamic driving comparison groups for assessing driving safety | Electricity | 25 | Active |
| US10664920B1 | Blockchain systems and methods for providing insurance coverage to affinity groups | Electricity | 20 | Active |
| US10713728B1 | Risk mitigation for affinity groupings | Physics | 16 | Active |
| US9456956B1 | Aseptic assembling of pharmaceutical containers | Performing Operations; Transporting | 14 | Active |
| US11032496B2 | Enhanced shutter efficiency time-of-flight pixel | Electricity | 9 | Active |
| US9825073B2 | Enhanced back side illuminated near infrared image sensor | Electricity | 8 | Active |
| US9419044B2 | Image sensor pixel having storage gate implant with gradient profile | Electricity | 5 | Active |
| US10110783B2 | Image sensor precharge boost | Electricity | 5 | Active |
| US11714001B2 | Integrated circuit with sequentially-coupled charge storage and associated techniques comprising a photodetection region and charge storage regions to induce an intrinsic electric field | Performing Operations; Transporting | 4 | Active |
| US10964738B2 | Image sensor having a source follower transistor with a multi-thickness gate dielectric | Electricity | 3 | Active |
| US11573180B2 | Integrated sensor with reduced skew | Physics | 3 | Active |
| US9806122B2 | Visible and infrared image sensor | Electricity | 2 | Active |
| US11869917B2 | Integrated sensor for lifetime characterization | Electricity | 2 | Active |
| US10997660B1 | Automatic life planning and execution based on personal goals | Electricity | 2 | Active |
| US11719639B2 | Integrated sensor for multi-dimensional signal analysis | Physics | 1 | Active |
| US11029397B2 | Correlated time-of-flight sensor | Physics | 1 | Active |
| US11804499B2 | Optical and electrical secondary path rejection | Electricity | 1 | Active |
| US9082675B2 | Partitioned silicon photomultiplier with delay equalization | Electricity | 1 | Active |
| US11885744B2 | Sensor for lifetime plus spectral characterization | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.