Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
US11715635B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Nov 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.