Andrew A. Allerman
19Patents
6h-index
45Co-inventors
66Inventor score
Filing activity: Apr 10, 1997 → Jan 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6252287A | InGaAsN/GaAs heterojunction for multi-junction solar cells | Emerging Cross-Sectional Technologies | 186 | Expired |
| US6393038B1 | Frequency-doubled vertical-external-cavity surface-emitting laser | Electricity | 64 | Expired |
| US5995529A | Infrared light sources with semimetal electron injection | Electricity | 30 | Expired |
| US6365428B1 | Embedded high-contrast distributed grating structures | Emerging Cross-Sectional Technologies | 16 | Expired |
| US10388753B1 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Electricity | 11 | Active |
| US6248992A | High gain photoconductive semiconductor switch having tailored doping profile zones | Electricity | 7 | Expired |
| US7915626B1 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films | Electricity | 6 | Active |
| US9059356B1 | Laterally injected light-emitting diode and laser diode | Electricity | 5 | Active |
| US8895335B1 | Impurity-induced disorder in III-nitride materials and devices | Electricity | 3 | Active |
| US6071109A | Method of making AlInSb by metal-organic chemical vapor deposition | Chemistry; Metallurgy | 3 | Expired |
| US9196788B1 | High extraction efficiency ultraviolet light-emitting diode | Emerging Cross-Sectional Technologies | 3 | Active |
| US9368677B2 | Selective layer disordering in III-nitrides with a capping layer | Emerging Cross-Sectional Technologies | 2 | Active |
| US9917149B1 | Diode and method of making the same | Electricity | 1 | Active |
| US8349633B1 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films | Electricity | 1 | Active |
| US9595616B1 | Vertical III-nitride thin-film power diode | Electricity | 0 | Active |
| US11715635B2 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Electricity | 0 | Active |
| US11177126B2 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Electricity | 0 | Active |
| US10553697B1 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Electricity | 0 | Active |
| US12218255B2 | High voltage gallium nitride vertical PN diode | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.