Silicon carbide diode with reduced voltage drop, and manufacturing method thereof
US11715769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Jan 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.