Self-aligned gate endcap (SAGE) architectures with gate-all-around devices having epitaxial source or drain structures
US11715775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2022 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Self-aligned gate endcap architectures with gate-all-around devices having epitaxial source or drain structures are described. For example, a structure includes first and second vertical arrangements of nanowires, the nanowires of the second vertical arrangement of nanowires having a horizontal width greater than a horizontal width of the nanowires of the first vertical arrangement of nanowires. First and second gate stacks are over the first and second vertical arrangements of nanowires, respectively. A gate endcap isolation structure is between the first and second gate stacks, respectively. First epitaxial source or drain structures are at ends of the first vertical arrangement of nanowires and have an uppermost surface below an uppermost surface of the gate endcap isolation structure. Second epitaxial source or drain structures are at ends of the second vertical arrangement of nanowires and have an uppermost surface below the uppermost surface of the gate endcap isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.