Controller for controlling a GaN-based device and method for implementing the same
US11716081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Aug 24, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal VDRV to the GaN-based semiconductor device such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage Vref over an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.