INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
65Patents
65Active
65Granted
63Portfolio score
Filing activity: May 14, 2020 → Jan 15, 2024
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10833159B1 | Semiconductor device and method for manufacturing the same | Electricity | 11 | Active |
| US11929406B2 | Semiconductor device and method for manufacturing the same | Electricity | 2 | Active |
| US11747390B2 | Apparatus and method for measuring dynamic on-resistance of GaN-based device | Physics | 1 | Active |
| US11916490B2 | Multi-functional PCB for assembling GaN-based power converter | Electricity | 1 | Active |
| US11916489B2 | High efficiency and high density GaN-based power converter | Emerging Cross-Sectional Technologies | 1 | Active |
| US12289904B2 | Nitride-based semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12289920B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12027615B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12279444B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12148801B2 | Nitride-based semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11716081B2 | Controller for controlling a GaN-based device and method for implementing the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US12289901B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12125902B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12199017B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11777023B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11632051B2 | Flyback converter and method of operating the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US12243938B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11916488B2 | High efficiency and high density GaN-based power converter | Emerging Cross-Sectional Technologies | 0 | Active |
| US12062653B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US11830913B2 | Semiconductor device and fabrication method thereof | Electricity | 0 | Active |
| US12068391B2 | Semiconductor device structures and methods of manufacturing the same | Electricity | 0 | Active |
| US12154864B2 | III-nitride-based semiconductor devices on patterned substrates and method of making the same | Electricity | 0 | Active |
| US12148713B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11923778B2 | High efficiency and high density GaN-based power converter and method for manufacturing the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US12159931B2 | Nitride-based semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.