Nonvolatile memory device
US11716849B2 · kind B2 · utility
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2References
20Claims
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Assignee
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Key dates
| Filing date | Jan 7, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Oct 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.