Dong-Seog Eun
24Patents
7h-index
36Co-inventors
69Inventor score
Filing activity: Sep 7, 2001 → Jul 21, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9716104B2 | Vertical memory devices having dummy channel regions | Electricity | 31 | Active |
| US9991271B2 | Integrated circuit device including vertical memory device and method of manufacturing the same | Electricity | 21 | Active |
| US9640549B2 | Vertical memory device with gate lines at the same level connected | Electricity | 13 | Active |
| US6737335B2 | Shallow trench isolation type semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 12 | Expired |
| US9773806B1 | Semiconductor device | Electricity | 11 | Active |
| US10153292B2 | Vertical memory devices having dummy channel regions | Electricity | 11 | Active |
| US10103165B2 | Memory device | Electricity | 8 | Active |
| US10204919B2 | Vertical memory device | Electricity | 6 | Active |
| US10396092B2 | Vertical memory device and method of manufacturing the same | Electricity | 6 | Active |
| US9281414B2 | Vertical cell-type semiconductor device having protective pattern | Electricity | 6 | Active |
| US7700426B2 | Nonvolatile memory device and method of forming the same | Electricity | 5 | Active |
| US6586804B2 | Shallow trench isolation type semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US10546874B2 | Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks | Electricity | 4 | Active |
| US9972636B2 | Vertical memory devices having dummy channel regions | Electricity | 4 | Active |
| US10964720B2 | Semiconductor memory device | Electricity | 3 | Active |
| US10886289B2 | Integrated circuit device including vertical memory device and method of manufacturing the same | Electricity | 2 | Active |
| US10854631B2 | Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks | Electricity | 1 | Active |
| US7348267B2 | Flash memory and method of fabricating the same | Electricity | 1 | Expired |
| US7736989B2 | Method of forming semiconductor device | Electricity | 1 | Active |
| US11716849B2 | Nonvolatile memory device | Electricity | 0 | Active |
| USRE50547E1 | Integrated circuit device including vertical memory device and method of manufacturing the same | General | 0 | Active |
| US7541243B2 | Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers | Electricity | 0 | Active |
| US10211220B2 | Semiconductor device | Electricity | 0 | Active |
| USRE50225E1 | Integrated circuit device including vertical memory device and method of manufacturing the same | General | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.