DC magnetron sputtering
US11718908B2 · kind B2 · utility
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1References
14Claims
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Assignee
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Key dates
| Filing date | Apr 27, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Apr 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.