Techniques for controlling precursors in chemical deposition processes
US11718914B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Sep 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/00
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.