Mask synthesis using design guided offsets
US11720015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects described herein relate to mask synthesis using design guided offsets. A target shape on an image surface to be fabricated using a mask based on a design of an integrated circuit is obtained. Rays are generated emanating from respective anchor points. The anchor points are on a boundary of the target shape or a boundary of a mask shape of the mask. For each ray of the rays, a distance is defined between a first intersection of the respective ray and the boundary of the target shape and a second intersection of the respective ray and the boundary of the mask shape. An analysis is performed by one or more processors, where the analysis is configured to modify the distances based on an error between the target shape and a resulting shape simulated to be on the image surface resulting from the mask shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.