Method for forming gate metal structure having portions with different heights
US11721759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2022 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jul 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/611
Abstract
A semiconductor device includes a substrate, a dielectric layer, a source region, a drain region, and a metal structure. The substrate has a trench therein, and the dielectric layer is conformally formed over the substrate and the trench. The source region and the least one drain region are in the substrate. The metal structure is filled in the trench and surrounded by the dielectric layer, and the metal structure is disposed between the source region and the drain region. Moreover, the metal structure has a first metal portion and a second metal portion which has a height greater than a height of the first metal portion, and the first metal portion is disposed between the drain region and the second metal portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.