Low resistance composite silicon-based electrode
US11721801B2 · kind B2 · utility
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13References
15Claims
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Key dates
| Filing date | Aug 17, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Dec 20, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.