Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain
US11721954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Nov 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32358
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.