Polymer for formation of resist underlayer film, composition for formation of resist underlayer film comprising same and method for manufacturing semiconductor element by using same
US11725076B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Jul 2, 2018 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/3424
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a polymer having a novel structure used in a process for manufacturing a semiconductor and a display; an underlayer film composition for a process for manufacturing a semiconductor and a display, including the same; and a method for manufacturing a semiconductor element by using the same. The novel polymer of the present invention has both optimized etch selection ratio and planarization properties and excellent heat resistance, and thus the underlayer film composition including the same can be used as a hard mask in a semiconductor multilayer lithography process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.