PVD target design and semiconductor devices formed using the same
US11725270B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2020 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Oct 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.