Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
US11728160B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 15, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Dec 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.