Low-refractivity grid structure and method forming same
US11728364B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Aug 11, 2020 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/018
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.