Power semiconductor device having a strain-inducing material embedded in an electrode

US11728427B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Karner · Blindenmarkt, AT
• Oliver Blank · Villach, AT
• Günter Denifl · Annenheim, AT
• Germano Galasso · Unterhaching, DE
• Saurabh Roy · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Michael Stadtmueller · Villach, AT

Key dates

• Filing date: Jun 21, 2021
• Grant date: Aug 15, 2023
• Expiry date: Nov 4, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.