Michael Stadtmueller
13Patents
2h-index
36Co-inventors
50Inventor score
Filing activity: Oct 14, 2003 → Feb 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6802712B2 | Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system | Chemistry; Metallurgy | 5 | Expired |
| US7718475B2 | Method for manufacturing an integrated circuit including a transistor | Electricity | 3 | Active |
| US8685828B2 | Method of forming a capacitor | Electricity | 1 | Active |
| US9515162B2 | Surface treatment of semiconductor substrate using free radical state fluorine particles | Electricity | 1 | Active |
| US9825131B2 | Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors | Electricity | 1 | Active |
| US10192955B2 | Semiconductor device containing oxygen-related thermal donors | Electricity | 0 | Active |
| US12341012B2 | Method for annealing a gate insulation layer on a wide band gap semiconductor substrate | Electricity | 0 | Active |
| US11127839B2 | Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate | Electricity | 0 | Active |
| US9196675B2 | Capacitor and method of forming a capacitor | Electricity | 0 | Active |
| US11728427B2 | Power semiconductor device having a strain-inducing material embedded in an electrode | Electricity | 0 | Active |
| US7144770B2 | Memory cell and method for fabricating it | Electricity | 0 | Expired |
| US11295951B2 | Wide band gap semiconductor device and method for forming a wide band gap semiconductor device | Electricity | 0 | Active |
| US9881991B2 | Capacitor and method of forming a capacitor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.