Proximity correction methods for semiconductor manufacturing processes
US11733603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Aug 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/027
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A proximity correction method for a semiconductor manufacturing process includes: generating a plurality of pieces of original image data from a plurality of sample regions, with the sample regions selected from layout data used in the semiconductor manufacturing process; removing some pieces of original image data that overlap with each other from the plurality of pieces of original image data, resulting in a plurality of pieces of input image data; inputting the plurality of pieces of input image data to a machine learning model; obtaining a prediction value of critical dimensions of target patterns included in the plurality of pieces of input image data from the machine learning model; measuring a result value for critical dimensions of actual patterns corresponding to the target patterns on a semiconductor substrate on which the semiconductor manufacturing process is performed; and performing learning of the machine learning model using the prediction value and the result value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.