Electronic devices comprising crystalline materials and related memory devices and systems
US11735416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first amorphous material, forming a second amorphous material over and in contact with the first material, removing a portion of the second material and the first material to form pillars, and exposing the materials to a temperature between a crystallization temperature of the first material and a crystallization temperature of the second material. The first material and the second material each comprise at least one element selected from the group consisting of silicon and germanium. The second material exhibits a crystallization temperature different than a crystallization temperature of the first material. Semiconductor structures, memory devices, and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.