Method for processing of semiconductor films with reduced evaporation and degradation
US11735419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Mar 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.