Michael Iza
13Patents
5h-index
14Co-inventors
59Inventor score
Filing activity: Sep 8, 2006 → Jan 24, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7691658B2 | Method for improved growth of semipolar (Al,In,Ga,B)N | Electricity | 247 | Active |
| US7709284B2 | Method for deposition of magnesium doped (Al, In, Ga, B)N layers | Electricity | 156 | Active |
| US7575947B2 | Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Electricity | 12 | Active |
| US7687293B2 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Electricity | 11 | Active |
| US8183557B2 | (Al,In,Ga,B)N device structures on a patterned substrate | Electricity | 11 | Active |
| US8110482B2 | Miscut semipolar optoelectronic device | Electricity | 4 | Active |
| US8368179B2 | Miscut semipolar optoelectronic device | Electricity | 4 | Active |
| US8193079B2 | Method for conductivity control of (Al,In,Ga,B)N | Electricity | 3 | Active |
| US8795430B2 | Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates | Emerging Cross-Sectional Technologies | 1 | Active |
| US8709925B2 | Method for conductivity control of (Al,In,Ga,B)N | Electricity | 0 | Active |
| US8405128B2 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Electricity | 0 | Active |
| US8592802B2 | (Al, In, Ga, B)N device structures on a patterned substrate | Electricity | 0 | Active |
| US11735419B2 | Method for processing of semiconductor films with reduced evaporation and degradation | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.