Fin field-effect transistor and method of forming the same
US11735425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Mar 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.