Semiconductor device and method of manufacture
US11735426B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.