Methods for forming memory devices, and associated devices and systems
US11735473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Feb 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.