Power modules for ultra-fast wide-bandgap power switching devices
US11735492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Sep 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/49175
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low inductance power modules for ultra-fast wide-bandgap semiconductor power switching devices are disclosed. Conductive tracks define power buses for a switching topology, e.g. comprising GaN E-HEMTs, with power terminals extending from the power buses through the housing to provide a heatsink-to-busbar distance which meets creepage and clearance requirements. Low-profile, low-inductance terminals for gate and source-sense connections extend from contact areas located adjacent each power switching device to provide for a low inductance gate drive loop, for high di/dt switching. The gate driver board is mounted on the low-profile terminals, inside or outside of the housing, with decoupling capacitors provided on the driver board. For paralleled switches, additional terminals, which are referred to as dynamic performance pins, are provided to the power buses. These pins are configured to provide a low inductance path for high-frequency current and balance inductances of the power commutation loops for each switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.