Semiconductor having a backside wafer cavity for radio frequency (RF) passive device integration and/or improved cooling and process of implementing the same
US11735538B2 · kind B2 · utility
5Cited by
2References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Mar 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device configured for a radio frequency (RF) application and further configured for passive device integration and/or improved cooling includes a substrate; an active region portion arranged on the substrate, the active region portion includes at least one radio frequency (RF) transistor amplifier; a cavity arranged within the substrate; and one or more radio frequency (RF) devices arranged in the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.